Abstract:
"This work was devoted to the study and the modelling of the Field-Plate HEMTs
structure based on AlmGa1-mN/GaN heterostructure considered these last years as promising
devices for high voltage and high power applications. We presented a new design of this
device for high power applications, based on the use of a Field Plate combined with a high-k
material above an oxide layer AlGaN/GaN GCFPS-HEMTs. In order to study the electrical
properties and to predict the performances of the device, a two dimensional analytical model
was developed in which the analytical expressions for the potential distribution, the electric
field profile and the concentration control «ns» in channel 2DEG are calculated according to
the applied voltage and the technological parameters of the studied structure by including the
effects of spontaneous and piezoelectric polarization."
