Modelisation et analyse de l’effet du field plate avec couche dielectrique High- K sur les proprietes electriques des Hemts AlmGa1-mN/GaN

Abstract

"This work was devoted to the study and the modelling of the Field-Plate HEMTs structure based on AlmGa1-mN/GaN heterostructure considered these last years as promising devices for high voltage and high power applications. We presented a new design of this device for high power applications, based on the use of a Field Plate combined with a high-k material above an oxide layer AlGaN/GaN GCFPS-HEMTs. In order to study the electrical properties and to predict the performances of the device, a two dimensional analytical model was developed in which the analytical expressions for the potential distribution, the electric field profile and the concentration control «ns» in channel 2DEG are calculated according to the applied voltage and the technological parameters of the studied structure by including the effects of spontaneous and piezoelectric polarization."