Abstract:
In this work, the ion implantation of antimony or arsenic in silicon specimens was investigated. This study was based on the simulation of experimental RBS spectra by RBX code and the measurement of Knoop micro-hardness.
Experimentally, the samples which were characterized by RBS and simulated by RBX are the virgin single crystal silicon Si(111) and the doped single crystal silicon Si(111) by antimony ions with a dose of for an energy of . Those which were characterized by the Knoop test are, in one hand, the single crystal silicon Si(111) wafers which are doped by antimony ions with a dose of for an energy of
. On the other hand, they are the other single crystal silicon Si(111) samples which are doped by arsenic ions with a dose of for an energy of . A conventional thermal annealing under vacuum for thirty minutes was applied at 900 °C during 30 minutes Regarding to the characterization of thin films, the wafers which are un-implanted or implanted by antimony with a dose of were analyzed by the RBS
technique with both random and channeling mode. The other implanted specimens by antimony or arsenic with doses of or respectively were analyzed by Knoop micro-hardness test. All the doped samples were characterized before and after the thermal annealing. This characterization revealed the caused damages,
their restoration and their influence on the surface hardening.
The RBX simulation of RBS spectra in both random and channeled mode allowed us to estimate the ion implantation parameters, these parameters are agreed with those which were found by SRIM 2013 simulation and those which were calculated empirically. Furthermore, the defect concentration profile has been obtained.
