Résumé:
The ternary AlInN is a material used in optical components such as light emitting diodes,
laser diodes, fiber Bragg grating as well as in electronic components such as HEMTs. It
comes in two phases, wurtzite and zinc blende, it is proposed then, in this work, first to
compare the structural and electronic properties of the two phases. This comparison would be
beneficial to choose the most appropriate phase for a given component. Furthermore we will
try to study high pressure effects on the structural and electronic properties of AlInN and its
phase transformation into the rocksalt phase.
The AlInN comes generally in the form of heterostructure AlInN/GaN in electronic
components. Its growth on the GaN layer causes the appearance of elastic stresses resulting in
profound changes in its structural and electronic properties. The second part of this work will
involve the study of the physical effect of these constraints.
And finally after a brief introduction on architecture and on the physics of a HEMT, one will
attempt to apply the above concepts to the effects on the main parameters governing the
operation of this component.
Two calculation methods have been used for theoretical studies: the first semi empirical tight
binding method, and the second ab-initio the density functional theory. A theoretical overview
of these methods is exposed as well as the calculation parameters used.
