Abstract:
This thesis deals the study ofstatic and dynamic properties of the transistor gate isolated
MOSFET.
After having briefly recalled properties of the semiconductor material « Si », we have
presented the structure and operating principle of the MOSFET component, as well as the
physical phenomena that govern their performance.
For MOSFET transistor we have developed an analytical model of the static properties
of the component, taking into account the effect of parasitic elements and physical parameters
specific of component.
Then we studied the dynamic properties ofhigh frequency MOSFET, and we offered an
electrical equivalent circuit diagram small signal and determined the mains dynamic
parameters.
Finally, we have concluded this work by a presentation and discussion of all the results
of the numerical simulation of static and dynamic characteristics of the MOSFET.
This study is important given the obtained results, the simplicity of mathematical
expressions, and it will be used in the study of computer-aided design “CAD” of logic and
analogical circuits based on MOSFET.
