الخلاصة:
In this work, several parameters related to the ion implantation of antimony or arsenic, in silicon substrates have been studied. This study was realized experimentally and by simulation using suitable programs.
Theoretically, we have used SRIM and C-TRIM programs to simulate and predict the physical phenomena resulting from ion collisions with target atoms. We have also obtained the different distributions (vacancies, ions,….) in depth of the target and estimated several parameters related to the implantation (RP, DRP, ....). In addition, we have studied the channeling phenomenon resulting from the impact of the ions beam orientation of the ions with respect to the sample surface.
Experimentally, the samples have been prepared by ion implantation of Sb+ (dose =1×1015 Sb+/cm2, 1.6×1015 Sb+/cm2, energy = 120 keV, in Si (111) substrates) or As+ (dose =1.5×1016 As+/cm2, energy = 100 keV, in Si (100) substrates). Afterwards, thermal annealing (900 ° C, 30min) have been performed under vacuum. We adopted RUMP, RBX and SIMNRA programs to analyze RBS spectra in random mode. We were able to estimate different parameters of ion implantation which were in agreement with simulation. Concerning the
experimental spectra in channeling mode, we have used the suitable RBX program. This program allowed us to estimate the thickness of the damaged layer of the target and to plot the curves of defects. Concerning the heat treatments, by these annealings, a good restoration of radiation has been achieved. Moreover, the impurities (As or Sb) have been electrically activated.
The samples have also been analyzed by other techniques such as X-Ray Diffraction (XRD), Infra Red spectroscopy by Fourier Transform (FTIR), Photoluminescence spectroscopy (PL) and four points resistivity.
