Abstract:
The failure of the photoconductors is often related to the degradation of surface
sensitive element and ohmic contacts. At present, the commonly known models
correlate these degradations to the surface recombination velocity Vs, which is very
difficult to measure and estimate experimentally. This work deals with deposition,
characterization, modeling and simulation of materials and infra-red photo-detectors.
In this manuscript, a new model allow to correlate the degradation of photoconductors
performances to the surface defects was proposed. This model treats the surface in a
different way; it is characterized by three parameters, the defects density (Nt), a single
energy level (Et) localized in the forbidden gap and a capture cross section ().
Moreover, in this thesis we have deposited and characterized a PbS thin infraredsensitive
films, by the chemical bath deposition method (CBD). Prototypes of
photoconductors were constructed. The comparison between the theoretical results
and the performances of these photoconductors was carried out. The parameters
drawn from these simulations are in good agreement with those reported in the
literature.
