Abstract:
Thin films of hydrogenated amorphous silicon carbide (a-SiC:H) are long time used in solar cells based on silicon. Various applications can be considered an example is cited as:
antireflection coating for solar cells based on hydrogenated amorphous silicon (a-Si: H) and dielectric layers for crystalline silicon (c-Si) for surface passivation. These layers have a good optical structural, electrical property and can provide exceptional surface passivation, essentially for crystalline silicon solar cells with high efficiency. This thesis reflects a fundamental study of the properties of the a-SiC: H layers deposited by sputtering and the a-Si1-x (CH3)x:H layers prepared by RF-PECVD. The deposition conditions were optimized in conjunction with the structural characterization, optical, electrical. A high minority carrier lifetime has reached as 121 μs for a 5% carbon content.
In addition, an optical gap can be increased by 1.91 eV to 2.10 eV by varying the deposition temperature and 1.97 to 2.41 eV according to the carbon content with a refractive index (n) adjustable of 1.57 to 2.61. Thin films a-SiC:H with 5% of carbon has been used for passivation of a crystalline silicon solar cell type n+pSi.
