Abstract:
Zinc oxide (ZnO) is direct wide band gap semiconductor (3.37 eV) with many interesting properties (structural, morphological, optical, electric, …). A wide range of applications makes it one of the most studied materials in the past decade.
In this research, we prepared by magnetron sputtering and thermal evaporation of thin layers of zinc oxide. In the first method of this work we deposited layers from a ZnO powder to study the influence of annealing temperature in the range from 2 hours to 6 hours on the structural properties of the films. While the second method, ZnO films were prepared from metallic Zn, and the influence of thermal annealing and annealing time on the structural, morphological, optical and electrical properties is the goal of this work.
These layers are transparent, and an electric conductivity with a semiconductor n-type nature, the structure has a hexagonal wurtzite type with a preferential orientation along the axis (002). The morphology of these layers indicates the presence of nano rodes.
