Etude par simulation des phénomènes de polarisations et les contacts ohmiques dans les transistors HEMTS base de GAN

Djimli Chahrazed; Telia A.

URI: http://depot.umc.edu.dz/handle/123456789/5911

Date: 2017-01-01

Description:

64 f.

Show full item record

Files in this item

Name: DJI4307.pdf

Size: 556.6Kb

Format: PDF

This item appears in the following Collection(s)

Magistère (Electronique)

Search DSpace

Browse

All of DSpace
This Collection
- By Issue Date
- Authors
- Titles
- Subjects

My Account