Résumé:
This thesis deals with two principle axes :
• Statistical characterization
• And dynamical characterization
of pn and Schottky (Al/mc-Si) diodes.
Statistical characterization is done through experimental ܫሺܸሻ and ܥሺܸሻ measures using
Polix-Photowatt multicristalline silicon structures. Parameters taken into account were the
Aluminium plot position, the metal nature and the operating temperature.
We used an iterative ܫሺܸሻ method and we developed a ܥሺܸሻ method to extract diode
parameters. Results obtained indicated the presence of trap levels in the grain boundaries, an
important effect of the metal position and operating temperature.
Dynamical characterization is carried out by the ac-small signal measurements applied to
Shottky and ݊diodes. These structures identification showed a fractional behavior of the
݊diode and an integer behavior of the Schottky one. The main contributions of this work
were then:
• The electrical characterization of multicrystalline silicon through Schottky Al/mc-Si
diodes;
• Development of an iterative method based on ܥሺܸሻ measurements to extract active
doping densities;
• Proposition of an electrical equivalent circuit to explain polycrystalline silicon
electrical behavior;
• Proposition of an identification diode method based on ac-small signal measurements;
• Experimental demonstration that ݊diode is a fractional system and Schottky diode is
an integer one.
