Abstract:
The development or improvement of new channels of field effect transistor can’t be considered without the support of physical modeling that allows the predetermination of characteristics and structural optimization. Therefore we were interested in the sum of our study to the modeling of field effect transistors: GaAs MESFET and CNTFET. After a descriptive study of the GaAs MESFET component using an analytical model that we have developed, a rigorous study of this component has been proposed by a physical model and the
introduction of special operators for determining potential field. We have presented the behavior of the transistor under the effect of the temperature. Then , we presented the different steps of implementation of the equations of our model based on solving one dimensional and two dimensional using Fermi Dirac statistics, to determine the charge density and thus the resistance of the carbon nanotube , and we deduce the characteristic of CNTFET. A simulation is carried out based on the expressions of the equations provided previously. The
results obtained are presented and interpreted.
