الخلاصة:
The objective of this work is to control the different parameters involved in the synthesis, by the hydrothermal method, of nanoparticles of ZnTe and ZnSe semiconductors in
order to use them as a filler and incorporate them into a polymer matrix to manufacture thin
films of hybrid nanocomposites (organic/inorganic). A great interest has recently been
granted to composite materials and particularly to nanocomposite materials because they have
very interesting properties which are the combination of the specific properties of each
constituent phase of the nanocomposite. This characteristic opens the way to many practical
applications. The initial phases used to manufacture our nanocomposites are the
semiconductor nanoparticles ZnTe, ZnSe and the most common polymer: poly (vinyl
chloride) (PVC). The structural, optical and electrical properties of the elaborated samples, in
the form of thin films by the dip-coating technique, were highlighted by different
characterization techniques: DRX, FT-IR, Raman, AFM, UV-Visible, Photoluminescence and
measurement of electrical resistivity. The obtained results demonstrated the synthesis of ZnTe
and ZnSe nanoparticles, a more or less uniform distribution of the semiconductor particles in
the PVC polymer matrix with a certain texture of the crystallites along the pulling axis of the
thin films. The optical transmittance decreases with the concentration of ZnTe or ZnSe in the
PVC but the optical gap varies very little. The intensity of the photoluminescence bands,
located in the violet and red regions, is influenced by the mutual interaction between the PVC
matrix and the ZnTe or ZnSe nanoparticles which takes place through a transfer of electronic
charges between both media through Foster's phenomenon. The samples of the studied
nanocomposites show a very interesting optical activity; by this behavior these materials can
claim applications in various fields such as optoelectronics and telecommunications.
Electrical measurements using the four-point technique showed a strong reduction in
electrical resistivity
