Résumé:
In this work, we have made a parallel study using both powders and thin layers of TiO2 doped by copper (Cu). Annealing temperatures effects and the Cu dopant concentration on the phase composition, chemical banding and microstructure were characterized by X-ray diffraction, Raman spectroscopy, transmission electron microscopy (TEM) and Atomic force microscopy (AFM). Both the dielectric properties of Cu doped TiO2 powders and the electrical resistivity of the films were acquired at room temperatures. The details outcome from XRD and Raman spectroscopy display that only the anatase TiO2 crystallization has been obtained for both films and powders as a function of annealing temperature and the Cu addition. Both the Impedance Spectroscopy and Nyquist diagrams Curves of Cu doped TiO2 were obtained at room temperature. The electrical resistivity (ρ) was found decreasing from 4.5 1011 to 8.7 1010 with the annealing temperature and the Cu addition
