الخلاصة:
In this work, we studied the radiation damage induced by the implantation of Sb+ ions into Si(111) targets at 120KeV energy to a dose of 1E15Sb+/cm2 and 1.6E15Sb+/cm2. The restoration of defects by the annealing treatments (900°C, 30min) was also investigated. The analysis of samples was performed by Rutherford Backscattering Spectrometry (RBS) using 2MeV He+ beam using channeling mode. The obtained spectra were analysed by the RBX code in order to extract the desired information: ion implantation parameters, thickness of the damaged layer and defects profiles.
Before annealing treating, the radiation damage increased with the use of antimony dose. By annealing treatment, a satisfactory restoration of damage was obtained approaching the state of virgin samples
