Abstract:
In this work ZnO and ZnO doped vanadium (1 - 6 %) thin films were deposited on
glass substrate by the pulsed laser deposition technique. The films were deposited at 500°C
under oxygen ambient pressure of 10-2 mbar with a laser fluence of 2 J/cm2. The study of
structural properties of the films as a function of the vanadium concentration was
investigated using XRD analysis. The patterns shows that all simples doped and undoped are
completely c-axis oriented with a high crystalline quality. Influence of doping concentration
in calculated grain size values was discussed
