Résumé:
In this work, we focus on the transport of spin-polarized currents in semiconductor materials and
the quantum modeling of this transport taking into account different mechanisms acting on the spin.
More specifically, we describe how are introduced in the equations relaxation mechanisms due to
the spin-orbit coupling and interactions with spin flip. We study theoretically the spin polarized
transport in the case of a 1D channel of a transistor with spin rotation called (spin FET). We
determined the relationship of the transmission function of the longitudinal wave vector of the
electron. And we also established the variation of the drain current in a transistor channel 1D spin-
FET in the case of a ballistic or non-ballistic projectile
