المستودع الرقمي في جامعة الإخوة منتوري قسنطينة 1

MORPHOLOGY, STRUCTURAL AND OPTICAL STUDY OF NANOCRYSTALLINE ZNS THIN FILMS PREPARED BY CBD AND SILAR METHODS

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dc.contributor.author DJELLOUL, A
dc.contributor.author ADNANE, M
dc.contributor.author HAMZAOUI, S
dc.contributor.author CHAUMONT, D
dc.date.accessioned 2022-05-30T10:19:05Z
dc.date.available 2022-05-30T10:19:05Z
dc.date.issued 2013-02-17
dc.identifier.uri http://depot.umc.edu.dz/handle/123456789/12600
dc.description.abstract The Zinc sulfide belongs to group II-VI compound semiconductor materials. ZnS is a very important semiconductor material with a large optical gap (> 3.5 eV), a large utility in thin-film devices, such as photoluminescent devices. In addition, the ZnS is an important material in the small emitting diodes in wavelength and in solar cells based layers as thin buffer layer heterojunctions. In this work, we became interested in the development of thin layers of a semiconductor type II-VI:Zinc sulphide (ZnS), and the study of opticaland structural which were prepared by two techniques the chemical bath CBD (Chemical Bath Deposition) and SILAR (Successive Ionic Layer Adsorption and Reaction).Our goal is to provide a comprehensive study on the effect of deposition time and the number of cycles on the physical properties of thin films of ZnS. In the first part of this work we have developed deposition techniques, the second part, relates to the development of a series of films with different deposition conditions for a process optimization in order to obtain films with good optoelectronic properties to be applied optionally in photovoltaic.We then conducted analyses of samples prepared by different characterization techniques: XRD and optical measurements
dc.language.iso en
dc.publisher Université Frères Mentouri - Constantine 1
dc.subject ZnS buffer layer
dc.subject SILAR
dc.subject CBD
dc.title MORPHOLOGY, STRUCTURAL AND OPTICAL STUDY OF NANOCRYSTALLINE ZNS THIN FILMS PREPARED BY CBD AND SILAR METHODS
dc.type Article


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