Abstract:
The Zinc sulfide belongs to group II-VI compound semiconductor materials. ZnS is a very
important semiconductor material with a large optical gap (> 3.5 eV), a large utility in thin-film
devices, such as photoluminescent devices. In addition, the ZnS is an important material in the
small emitting diodes in wavelength and in solar cells based layers as thin buffer layer
heterojunctions. In this work, we became interested in the development of thin layers of a
semiconductor type II-VI:Zinc sulphide (ZnS), and the study of opticaland structural which were
prepared by two techniques the chemical bath CBD (Chemical Bath Deposition) and SILAR
(Successive Ionic Layer Adsorption and Reaction).Our goal is to provide a comprehensive study on
the effect of deposition time and the number of cycles on the physical properties of thin films of
ZnS. In the first part of this work we have developed deposition techniques, the second part, relates
to the development of a series of films with different deposition conditions for a process
optimization in order to obtain films with good optoelectronic properties to be applied optionally in
photovoltaic.We then conducted analyses of samples prepared by different characterization
techniques: XRD and optical measurements
