Résumé:
The development of the tunnel junction interconnect was key to the development of the first
two-terminal monolithic, multi-junction solar cell. In this paper describes a simulation for the
tunnel junction (AlGaAs) between top cell( GaAs) and bottom cell (Ge ).this cascade solar cell was
simulated using the one dimensional simulation program called analysis of microelectronic and
photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was
varied from 5 to 50 nm. By varying thickness of tunnel junction layer the simulated device
performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum
efficiency (QE)
