Macromodeling of Power MOSFET Transistor Incorporating Self-Heating Effect

dc.contributor.author	Messaadi, Lotfi
dc.contributor.author	Dibi, Zohir
dc.date.accessioned	2022-05-30T10:18:27Z
dc.date.available	2022-05-30T10:18:27Z
dc.date.issued	2013-02-17
dc.identifier.uri	http://depot.umc.edu.dz/handle/123456789/12561
dc.description.abstract	An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model is highly accurate and is recognized in the industry. Simulation responses of the new self-heating MOSFET model track the dynamic thermal response independently of SPICE’s global temperature definition. Existing models may be upgraded to self-heating models with relative ease
dc.language.iso	en
dc.publisher	Université Frères Mentouri - Constantine 1
dc.subject	Device characterization
dc.subject	device modeling
dc.subject	high power discrete devices
dc.subject	modeling
dc.subject	MOS device
dc.subject	power semiconductor devices
dc.subject	semiconductor devices
dc.subject	simulation
dc.subject	Spice
dc.subject	thermal design
dc.title	Macromodeling of Power MOSFET Transistor Incorporating Self-Heating Effect
dc.type	Article