Abstract:
An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model is highly accurate and is recognized in the industry. Simulation responses of the new self-heating MOSFET model track the dynamic thermal response independently of SPICE’s global temperature definition. Existing models may be upgraded to self-heating models with relative ease
