عرض سجل المادة البسيط

dc.contributor.author Messaadi, Lotfi
dc.contributor.author Dibi, Zohir
dc.date.accessioned 2022-05-30T10:18:27Z
dc.date.available 2022-05-30T10:18:27Z
dc.date.issued 2013-02-17
dc.identifier.uri http://depot.umc.edu.dz/handle/123456789/12561
dc.description.abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model is highly accurate and is recognized in the industry. Simulation responses of the new self-heating MOSFET model track the dynamic thermal response independently of SPICE’s global temperature definition. Existing models may be upgraded to self-heating models with relative ease
dc.language.iso en
dc.publisher Université Frères Mentouri - Constantine 1
dc.subject Device characterization
dc.subject device modeling
dc.subject high power discrete devices
dc.subject modeling
dc.subject MOS device
dc.subject power semiconductor devices
dc.subject semiconductor devices
dc.subject simulation
dc.subject Spice
dc.subject thermal design
dc.title Macromodeling of Power MOSFET Transistor Incorporating Self-Heating Effect
dc.type Article


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