الخلاصة:
In this work we present the study of spin polarized transport in semiconductors as new type of current transmission in semiconductor devices, we built a 2deg model for so- called SPINFET transistor.
We chose the spinFET transistor or the transistor at spin rotation as a better implementation because it is a type of HEMT transistor in which we replace the source and drain by ferromagnetic contacts. The source contact acts as a spin polarizer for electrons injected into the conduction channel of the transistor and the drain contact is a spin analyzer to those (spins) which have reached the end of the canal. We establish the expression of drain current in function of orientations of the spin of electrons at the end of the canal and the magnetization of the drain contact, taking in account, the possibility to control the current through the grid voltage.
As application we have presented a simple model in the 1D and 2D channel formed in In0,53Ga0,47As a spin FET transistor
