الخلاصة:
The work presented in this memory is concerned on the modelling of only the optical switch, this last is made of a non linear wavespide in semiconductor Ill-V provided with a network coupler of diffraction with a griding layer in GaAs on minor of Bragg GaAs/ALAs aird GaAs6 substrate which functions in reflection The observed commutations have for origin the non linearities optics of GaAs which are related to thevariation of its refractive index fins last results from two quasi simultaneous effects: theç electronic effects which appear during the photo creation of the free carriers and the thermal
effects generated by their recombination. We have simulated a large number of experimental results with the model proposed and this shows that HI non linear regime , the phenomenon are in fact the combination of two opposite effects of thermal and electronic origin, the thermal effects finally prevailing over the electroniceffects on time scale explored during this study.
