Recombinaison à l'interface agrégat métallique/matrice semiconductrice. Effet de la taille.

Abstract

A theoretical model has been proposed in this work, studied the electrical activity of the metallic precipitate/ semiconducting matrix interface. A self-consistente procedure is used in order to appreciate the evolution of the physical parameters characterising this interface, such as: The radius of Read sphere“RT, the electrical charge “Q”, the barrier height “Eb”, the effective recombinaition velocity “Seff” and the cathodolumeniscence contrast “C”, as a function of the bulk excitation level “A”.The letter being the difference between the minority and majority quasi Fermi levels, EFN and EFp respectively, the approach used for such calculation takes into account a flat quasi Fermi level for the majority carrier’s .As for the quasi Fermi level of the minority carriers “EFN” it is not constant in the space charge region and in the quasineutral region. The carriers recombination is determined by the thermoionic law, the results that are obtained led to the knowledge of the variation senses of some physical parameters.