Contribution à l’étude de perturbations électromagnétiques sur des composants MOS en Utilisant la méthode FDTD

Abstract

The steady reduction in the size of MOS transistors leads to low electrical power consumption and very high cutoff frequencies. These performances make them attractive for microwave applications. This work is focused on the study of 0.55 μm CMOS technology skills for microwave applications up to 50 GHz. The modeling of the MOS transistor is made using a two-dimensional simulation code developed with MATLAB software. This program is based on the Gummel algorithm for the sequential solving of the semiconductor equations which are discretized by Backward-Euler scheme in spatial and temporal domains. We proposed also a coupling method that allows studying the MOS transistor functioning with a global electromagnetic analysis in the time domain using LE-FDTD in threedimensional space. The S-parameters and the internal capacities of the MOS transistor are calculated and plotted for different harmonics, and also other important parameters such as the transition frequency, the maximum oscillation frequency, the stability factor and the noise factor. In the other hand, we studied the sub-circuit functioning of the MOS transistor in microwave taking into account the effect of the interconnections (transmission lines, via ...). The comparison of the results obtained by our model with those given by commercial software (SENTAUSUS and HFSS) raises the validity and the reliability of the proposed model.