Serrar, H.; Labbani, R.; Benazzouz, C.
(Université Frères Mentouri - Constantine 1, 2016-12-15)
In this work, we studied the radiation damage induced by the implantation of Sb+ ions into Si(111) targets at 120KeV energy to a dose of 1E15Sb+/cm2 and 1.6E15Sb+/cm2. The restoration of defects by the annealing treatments ...