Khantoul, A.R.; Rahal, B.; Sebais, M.; Boudine, B.; Medjaldi, M.
(Université Frères Mentouri - Constantine 1, 2016-12-15)
ZnO is a n-type II-VI semiconductor with a wurtzite structure, a wide direct band gap of 3.37eV, and a large exciton binding energy of 60meV. It occupies a particular place among wide bandgap semiconductors (GaN, ZnS…), ...